Paipu PG Pyrolytic Graphite tube
Hoʻohana ʻia ka graphite Pyrolytic i ka ʻāʻī o nā nozzles rocket, antimagnetic spheres no ka mālama ʻana i ke ʻano satellite, nā ʻīpuka uila uila, nā crucibles no ka hoʻoheheʻe ʻana i nā metala maʻemaʻe kiʻekiʻe, nā pulupulu no nā regulators voltage, nā keʻena hoʻokuʻu o nā lasers, nā mea insulation no nā umu wela wela a me ka epitaxial. wafers no ka hana semiconductor.
ʻAʻohe mea ʻawaʻawa a ʻono ʻole；
Maʻemaʻe kiʻekiʻe loa (99 .99%)
Paʻa maikaʻi, ʻO ka wela hana kiʻekiʻe
Maikaʻi ka wela wela, liʻiliʻi thermal hoʻonui coeffi-
cient, maikaʻi thermal haʻalulu kū'ē
Paʻa kemika maikaʻi, kū i nā waikawa, alkalis, paʻakai a me
ic nā mea hoʻoheheʻe, a ʻaʻole e komo a hoʻoheheʻe ʻia me ka metala i hoʻoheheʻe ʻia
Haʻahaʻa loa outgassing rate
ʻAʻohe pores, ʻoluʻolu ea maikaʻi, maʻalahi machining
• OLED Evaporation point kumu crucible;
• Electron beam melting Crucible;
• Ion beam implantation component;
• Nā ʻāpana etching plasma;
• Sputtering pahu hopu;
• Ka uhi ʻana o ka puʻu nozzle;
• 'Atoma absorption paipu;
• PG wela.
| Nā Kūlana Nui | Heluhelu | Units | Kuhikuhi |
| ʻO ka mānoanoa | 2.15-2.22 | g/cm3 | - |
| ʻAiʻa uila | 2×10-4 | Ω·cm | ab |
| 0.6 | Ω·cm | c | |
| ʻO ke kau wela wela | 382 | W/m°C | ab |
| 2.8 | W/m°C | c | |
| Coefficient o ka hoonui wela (20°C) | 0.5 | μm/m-℃ | ab |
| ʻO ka mahana sublimation | 3650 | ℃ | - |
| Ka ikaika tensile | 80 | MPa | ab |
| Ka ikaika kulou | 130 | MPa | ab |
| 116 | MPa | c | |
| Ka ikaika compressive | 80 | MPa | ab |
| ʻO ke ʻano modulus quan | 20 | GPa | ab |
Inā makemake kekahi o kēia mau mea iā ʻoe, e ʻoluʻolu e haʻi mai iā mākou.E ʻoluʻolu mākou e hāʻawi iā ʻoe i kahi ʻōlelo ma ka loaʻa ʻana o nā kikoʻī kikoʻī o kekahi.Loaʻa iā mākou nā ʻenehana R&D ʻike pilikino e hoʻokō i kekahi o nā koi o kekahi, Ke ʻike nei mākou i mua i ka loaʻa koke ʻana o kāu mau nīnau a ke manaʻo nei e loaʻa ka manawa e hana pū me ʻoe i ka wā e hiki mai ana.Welina mai e nānā i kā mākou hui.
