ʻO ka ulu ʻana o nā kristal semiconductor hui
Ua ʻike ʻia ʻo Compound semiconductor ma ke ʻano he lua o ka hanauna o nā mea semiconductor, i hoʻohālikelike ʻia me ka hanauna mua o nā mea semiconductor, me ka hoʻololi optical, kiʻekiʻe electron saturation drift rate a me ke kūpaʻa wela kiʻekiʻe, ka pale ʻana i ka radiation a me nā ʻano ʻē aʻe, i ka ultra-high speed, ultra-high. ʻO ke alapine, ka mana haʻahaʻa, ka leo haʻahaʻa a me nā kaʻapuni, ʻoi aku ka nui o nā mea optoelectronic a me ka waihona photoelectric he mau pono kūʻokoʻa, ʻo ka mea nui loa o GaAs a me InP.
ʻO ka ulu ʻana o nā kristal hui semiconductor hoʻokahi (e like me GaAs, InP, a me nā mea ʻē aʻe) pono i nā kaiapuni koʻikoʻi, me ka mahana, ka maʻemaʻe maka a me ka maʻemaʻe o ka moku ulu.ʻO PBN kahi moku kūpono no ka ulu ʻana o nā kristal semiconductor hoʻokahi.I kēia manawa, ʻo ka hui semiconductor single crystal growth method ka mea nui e pili ana i ke ala huki huki pololei wai (LEC) a me ke ʻano hoʻoikaika paʻa gradient vertical (VGF), e pili ana me Boyu VGF a me LEC series crucible huahana.
I ke kaʻina hana o ka polycrystalline synthesis, ʻo ka ipu i hoʻohana ʻia no ka paʻa ʻana i ka gallium elemental pono e kaʻawale i ka deformation a me ka haki ʻana i ke kiʻekiʻe wela, e koi ana i ka hoʻomaʻemaʻe kiʻekiʻe o ka ipu, ʻaʻohe hoʻokomo o nā haumia, a me ke ola lawelawe lōʻihi.Hiki i ka PBN ke hoʻokō i nā koi a pau i luna a he moku hopena kūpono no ka polycrystalline synthesis.Ua hoʻohana nui ʻia ʻo Boyu PBN boat series i kēia ʻenehana.
